Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T06:57:12.287Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN Growth

Published online by Cambridge University Press:  10 February 2011

N. Grandjean ,
J. Massies ,
P. Vennègues ,
M. Laugt  and
M. Leroux
N. Grandjean
Affiliation:
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
J. Massies
Affiliation:
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
P. Vennègues
Affiliation:
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
M. Laugt
Affiliation:
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
M. Leroux
Affiliation:
Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
Get access

Abstract

The analysis of the sapphire surface nitridation by in situ reflection high-energy electron diffraction evidences the formation of a relaxed AIN layer. Its role on the early stage of the GaN growth is investigated by transmission electron microscopy (TEM). GaN crystallites of high structural quality, with the c axis perpendicular to the sapphire basal plane, are observed when the starting surface is nitridated. On the other hand, the growth of GaN on a bare substrate involves the formation of larger islands with numerous defects. TEM study reveals that the c axis of these latter crystallites is systematically tilted by about 19° with respect to the sapphire basal plane. Actually, this orientation corresponds to a particular epitaxial relationship between GaN and sapphire (0001) substrates. Finally, the optical properties of GaN thin layers are shown to be strongly dependent on the nitridation state of the sapphire surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 67
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994)Google Scholar
2. Nakamura, S., Senob, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996)Google Scholar
3. Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986)Google Scholar
4. Keller, S., Kemmer, B.P., Wu, Y.-F., Heyring, B., Kapolnek, D., Speck, JS., Mishra, UK., and Denbaars, S.P., Appl. Phys. Lett. 68, 1525 (1996)Google Scholar
5. Briot, O., Alexis, J.P., Gil, B., and Aulombard, R.L., MRS fall Meeting, Boston, November 1995Google Scholar
6. Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T., and Minagawa, S., J. Appl. Phys. 79, 3487 (1996)Google Scholar
7. Moustakas, T.D., Molnar, R.J., Lei, T., Menon, G., and Eddy, C.R. Jr., Mater, Res. Soc. Symp. Proc. 242, 427 (1992)Google Scholar
8. Grandjean, N., Massies, J., and Leroux, M., Appl. Phys. Lett. 69, 2071 (1996)Google Scholar
9. Kosicki, B.B. and Kahng, D., J. Vac. Sci. Technol. 6, 593 (1969)Google Scholar
10. Wickenden, D.K., Kaulkner, K.R., Brander, R.W., and Isherwood, B.J., J. Cryst. Growth 9, 158 (1971)Google Scholar
11. Manasevit, H.M, Herdmann, F.M., and Simpson, W.I., J. Electrochem. Soc. 118, 1864 (1971)Google Scholar
12. Sasaki, T. and Zembutsu, S., J. Appl. Phys. 61, 2533 (1987)Google Scholar
13. Yoshida, S., Misawa, S., and Gonda, S., J. Vac. Sci. Technol. B1, 250 (1983)Google Scholar
14. Powell, R.C., Lee, N.-E., Kim, Y.-M., and Greene, J.E., J. Appl. Phys. 73, 189 (1993)Google Scholar
15. Grandjean, N., Massies, J., Vennéguès, P., Laûgt, M., and Leroux, M., to be publishedGoogle Scholar
16. Christiansen, S., Albrecht, M., Dorsch, W., Strunk, H.P., Zanotti-Fregonara, C., Salviati, G., Pelzmann, A., Mayer, M., Kamp, M., and Ebeling, K.J., MRS Internet Journal of Nitride Semiconductor Research, Vol. 1, Article 19Google Scholar
17. Chung, B.-C. and Gershenzon, M., J. Appl. Phys. 72, 651 (1992)Google Scholar
18. Ren, B.G., Orton, J.W., Cheng, T.S., Dewsnip, D.J., Lacklison, D.E., Foxon, C.T., Malloy, C.H., Chen, X., MRS Internet Journal of Nitride Semiconductor Research. Vol. 1, Article 22Google Scholar