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Effect of the Introduction of a MBE Buffer Layer on the Morphology of InSb Almbe Layers Grown on InP Substrates

Published online by Cambridge University Press:  21 February 2011

J.C. Ferrer ,
A. Cornet ,
F. Peiró ,
J.R. Morante ,
T. Utzmeier  and
F. Briones
J.C. Ferrer
Affiliation:
EME, Dept. Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal, 645-647, 08028 Barcelona, Spain.
A. Cornet
Affiliation:
EME, Dept. Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal, 645-647, 08028 Barcelona, Spain.
F. Peiró
Affiliation:
EME, Dept. Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal, 645-647, 08028 Barcelona, Spain.
J.R. Morante
Affiliation:
EME, Dept. Física Aplicada i Electrònica, Universitat de Barcelona, Av.Diagonal, 645-647, 08028 Barcelona, Spain.
T. Utzmeier
Affiliation:
Instituto de Microelectrónica de Madrid (CSIC), C.Serrano, 144, 28006 Madrid, Spain.
F. Briones
Affiliation:
Instituto de Microelectrónica de Madrid (CSIC), C.Serrano, 144, 28006 Madrid, Spain.
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Abstract

In this paper we report on the morphology of InSb layers grown by atomic layer molecular beam epitaxy (ALMBE) onto InP substrates at low temperatures (330<T<400°C), comparing the nature and densities of defects with those found in ALMBE InSb films grown over InSb/InP buffer layers grown by molecular beam epitaxy (MBE). The main types of defects for ALMBE direct layers are threading dislocations and stacking faults with similar defect densities along both á110ñ directions. The inclusion of the intermediate InSb/InP MBE grown buffer layers leads to lower threading dislocation densities but higher and anisotropic stacking fault distribution. Moreover, different types of three-dimensional defects appear, which are associated with pyramidal or truncated pyramidal hillocks on the surface. These defects, consisting in twins associations are originated at the InSb/InP MBE interface and they are induced by an anomalous growth of InSb layers. In all the cases, the strain caused by the large lattice mismatch is accommodated by means of a pure edge-type misfit dislocation network placed at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 473
Copyright
Copyright © Materials Research Society 1996

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References

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