Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T01:37:19.960Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of the Finite Source Material on Electromigration Performance of a Novel Interconnect Test Structure

Published online by Cambridge University Press:  15 February 2011

Nguyen D. Bui
Nguyen D. Bui*
Affiliation:
Integrated Technology Division, AMD, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963, [email protected]
Get access

Abstract

Effects of finite source material, in multilevel interconnect systems, on reliability has been investigated. Two types of novel test structures were used in this study: 1] asymmetrical design structure in width and thickness for the top and bottom conductor layers, 2] symmetrical design structure in width and thickness for the top and bottom conductor layers. The results of the asymmetric contact and via chains studies showed that the electromigration lifetimes were not effected by the difference in the magnitude of the finite source material. The electromigration lifetimes of the symmetrical via structure, in width and thickness for the top and bottom conductor layers, exhibited a strong dependence on the finite source material. A failure model is proposed to explain the effect of finite source material on electromigration performance in such interconnect systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 87
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kaanta, C., et al. , VMIC Proceedings, p. 144, 1990 Google Scholar
[2] Roehl, S., et al. , VMIC Proceedings, p. 22, 1992 Google Scholar
[3] Kwok, T., et al. , VMIC Proceedings, p. 106, 1990 Google Scholar
[4] Rathore, H. S., Fillippi, R. G., Wachnik, R. A., Estabil, J. J., and Kwok, T., SPIE Vol. 1805 Submicrometer Metallization, p. 251, 1992 Google Scholar
[5] Kawasaki, K., Lee, C., Anderson, S., and Pintchovski, F., Proceedings of Third International Workshop on Stress Induced Phenomena in Metallization, 1995, in pressGoogle Scholar
[6] Bui, N., et al. , VMIC Proceedings, p. 344, 1992 Google Scholar
[7] Kahn, H., Thompson, C.V., and Cooperman, S. S., Proceedings of the Materials Research Society Symposium 265, p. 95, 1992 Google Scholar