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The Effect of Temperature in a thin Si Nanowire Transistor, with a Single Donor in the Channel, using Dissipative Physics

Published online by Cambridge University Press:  20 May 2013

Antonio Martinez ,
Karol Kalna  and
Manuel Aldegunde
Antonio Martinez
Affiliation:
Electronic Systems Design Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PY,Wales, UK.
Karol Kalna
Affiliation:
Electronic Systems Design Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PY,Wales, UK.
Manuel Aldegunde
Affiliation:
Electronic Systems Design Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PY,Wales, UK.
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Abstract

Dissipative quantum transport simulations using the Non-Equilibrium Green Function Formalism have been carried out to obtain a transfer characteristic of a Si gate-all-around (GAA) nanowire transistor. A donor-type impurity has been located close to the source/channel interface, creating a resonant level. The existence and energy of the resonant level depends on the value of the gate bias. The dependence of the current reduction due to phonon scattering as a function of the gate bias, has a minimum due to the resonant level. The simulations at different temperatures have shown a decline in the sub-threshold slope at high temperature and an improvement at low temperature. Finally, the sub-threshold slope approximate follows the standard linear temperature dependence.

Keywords

nanostructuresimulationmicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1550: Symposium Q – Surfaces of Nanoscale Semiconductors , 2013 , mrss13-1550-q03-14
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Martinez, A., Kalna, K., and Aldegunde, M., “Impact of phonon scattering in a Si GAA nanowire FET with a single donor in the channel” IEEE NANO, Portland, 551—554 (2011).,Google Scholar
Aldegunde, M., Martinez, A., and Barker, J. R., “Study of discrete doping induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations”, IEEE Electron Dev. Lett. 33, 194 (2012).10.1109/LED.2011.2177634CrossRefGoogle Scholar
Martinez, A., Seoane, N., Aldegunde, M., Brown, A. R., Barker, J. R., and Asenov, A., “Quantum transport study on the impact of channel length and cross-section on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors”, IEEE Trans. Electron Devices 58, 2209–2217 (2011).10.1109/TED.2011.2157929CrossRefGoogle Scholar
Martinez, A., Seoane, N., Brown, A. R., Barker, J. R., and Asenov, A., “Variability in Si Nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully 3D NEGF simulation study”, IEEE Trans. Electron Devices 57, 1626–1635 (2010).10.1109/TED.2010.2048405CrossRefGoogle Scholar
Aldegunde, M., Martinez, A., and Asenov, A., “Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors”, J. Appl. Phys. 110, 094518 (2011).10.1063/1.3658856CrossRefGoogle Scholar
Jin, S., Park, Y. J., and Min, H. S., “A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions”, J. Appl. Phys. 99, 123719 (2006).10.1063/1.2206885CrossRefGoogle Scholar
Pierre, M., Wacquez, R., Jehl, X., Sanquer, M., Vinet, M., and Cueto, O., “Singledonor ionization energies in a nanoscale CMOS channel”, Nat. Nanotechnol. 5, 2010, pp. 1128–1131.10.1038/nnano.2009.373CrossRefGoogle Scholar