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Effect of Surface Oxide Layer on Mechanical Properties of Single Crystalline Silicon

Published online by Cambridge University Press:  01 February 2011

Kenji Miyamoto ,
Koji Sugano ,
Toshiyuki Tsuchiya  and
Osamu Tabata
Kenji Miyamoto
Affiliation:
[email protected], Kyoto University, Microengineering, Yoshidahonmachi, Sakyo-ku, Kyoto, 606-8501, Japan
Koji Sugano
Affiliation:
[email protected], Kyoto University, Microengineering, Yoshidahonmachi, Sakyo-ku, Kyoto, 606-8501, Japan
Toshiyuki Tsuchiya
Affiliation:
[email protected], Kyoto University, Microengineering, Yoshidahonmachi, Sakyo-ku, Kyoto, 606-8501, Japan
Osamu Tabata
Affiliation:
[email protected], Kyoto University, Microengineering, Yoshidahonmachi, Sakyo-ku, Kyoto, 606-8501, Japan
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Abstract

Fatigue fracture under cyclic loading of single crystal silicon (SCS) is concerned and fatigue properties and mechanism are investigated widely. Surface oxide is considered to have an important role on fatigue fractures. In this paper, the tensile testing of SCS whose surface was intentionally oxidized and the effect of the oxide thickness on the mechanical properties were reported. After fabrication of SCS specimens, they were oxidized in dry oxidization at 1100 ºC. Quasi-static tensile testing of SCS specimens with no, 100-nm-oxide, and 200-nm-oxide thick oxide was performed. As the results, the deviation in fracture strain was decreased by oxidation, and the fracture origin was observed to be the inner silicon part. These results might be caused by the decrease of surface roughness and defects formation by oxygen precipitation during thermal oxidation.

Keywords

Sioxidationstrength
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD02-03
Copyright
Copyright © Materials Research Society 2008

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References

1 Muhlstein, C.L, Brown, S.B, Ritchie, R.O, Acta Mater. 50, 3579 (2002).Google Scholar
2 Kahn, H., Ballarini, R., Bellante, J., Heuer, A.H, Science. 1215 (2002).Google Scholar
3 Yamaji, Y., Proceedings of the MEMS'2007, Kobe, Japan. 267 (2007).Google Scholar
4 Fitch, J.T, Bjorkman, C.H, and Lucovsky, G., J.Vac. Sci Technol. B 7, 775 (1989).Google Scholar
5 Yoshioka, T., Ando, T, Shikida, M, Sato, K, Sensors and Actuators. 82, 291 (2000).Google Scholar
6 Orowan, E., Rep. Prog. Phys. 12, 185 (1948).Google Scholar
7 Borghesi, A., BPivac, , Sassella, A., and Stella, A., J. Appl. Phys. 77 (9), 4169 (1995).Google Scholar
8 Livingston, F.M, Messoloras, S, Newman, R C, Pike, B. C, Stewrt, R.J, Brown, W. P, and Wilkes, J.G., J. Phys. C 17. 6253 (1984)Google Scholar