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The Effect of Substrate Orientation on the Properties of (Ga, Al)As Grown by Gas Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

A. Sandhu ,
T. FUJII ,
H. Ando ,
H. Ishikawa  and
E. Miyauchi
A. Sandhu
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
T. FUJII
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
H. Ando
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
H. Ishikawa
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
E. Miyauchi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

We have carried out the first systemmatic investigation on the effect of substrate temperature and arsenic partial pressure on the morphology, growth rate, and compensation ratio of Si-doped GaAs, and the Al content of AlxGa1−xAs grown on just-cut (100), (110), (111)A&B, (311)A&B orientated GaAs substrates by gas source MBE (GSMBE). Triethylgallium ( TEG, Ga(C2H5)3 ) and triethylaluminium ( TEA, Al(C2H5)3 ) were used as group III sources, and solid arsenic ( As4 ) and silicon as a group V and IV sources, respectively. The best GaAs mophology was obtained at relatively high temperatures and arsenic pressures. The A orientations were identified as ‘fast surfaces,’ with the GaAs growth rate being comparable to the (100) orientation. The B orientations were identified as ‘slow surfaces,’ with the GaAs growth rate being much less (approximately 50% for the (111)B orientation ) than on the (100) orientation. The least compensated Si-doped GaAs was grown on the (311)A orientated substrate. The Al content, x, (nominally x=0.27 for (100)) of AlxGas1−xAs grown on (110), (111)A&B, was less than 0.05 and not affected by the growth conditions. The Al content of epilayers grown on (311)A&B ranged between x=0.1 to 0.27, strongly depending on the growth temperature.

These results show that using GSMBE we can selectively modifying a large range of (Ga,Al)As crystal properties. Potential applications include the selective growth and realisation of ultra-fine and planar structures and devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 215
Copyright
Copyright © Materials Research Society 1989

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References

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