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Effect of Substrate Heating During Excimer Laser Annealing on Poly-Si TFT

Published online by Cambridge University Press:  15 February 2011

T. Noguchi ,
A. J. Tang ,
J. A. Tsai  and
R. Reif
T. Noguchi
Affiliation:
On leave from Sony Corp., Atsugi-shi, Japan.
A. J. Tang
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, 60 Vassar St., Cambridge, MA
J. A. Tsai
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, 60 Vassar St., Cambridge, MA
R. Reif
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, 60 Vassar St., Cambridge, MA
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Abstract

Single-shot ELA was performed on 45nm-thick amorphous Si films. With an increase in pulse energy density, the cystallinity improved drastically for both samples without heating and with heating at 400°C. Correspondingly, the characteristics of TFT fabricated using a low temperature process improved distinctly. The threshold voltage decreased depending on the decrease in gate voltage swing due to the improvement in crystallinity of Si films. Efficient single-pulse ELA of less than 250MJ/cm2 as the optimum condition for poly Si TFT has been attained as a result of saving an energy amount of 100mJ/cm2 by heating the substrate. Moreover, a uniform distribution of TFT characteristics across the wafer was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 357
Copyright
Copyright © Materials Research Society 1996

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