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Published online by Cambridge University Press: 26 February 2011
We report on the growth, the structural and the electronic characterization of semiconducting Diindenoperylene (DIP) single crystals. Temperature dependent x-ray measurements reveal a structural phase transition occurring at around 370 K. Temperature dependent time-of-flight (TOF) hole mobility shows a thermally activated behavior up to the phase transition temperature with an activation energy of ∼ 180 meV. A field effect is successfully demonstrated on transistors based on DIP single crystal and yields a room temperature hole mobility of about ∼ 2×10−5 cm2/Vs. Unlike TOF measurements, no electron transport was observed in field-effect transistors (FETs) geometry which could be attributed to the large injection barrier for electrons at the DIP-Ag-contact interface in contrast to the injection barrier for holes.