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Effect of strain on Ni-(GeSn)x contact formation to GeSn nanowires

Published online by Cambridge University Press:  10 June 2014

M. Noroozi ,
M. Moeen ,
A. Abedin ,
M. S. Toprak  and
H. H. Radamson
M. Noroozi
Affiliation:
Department of Materials and Nano Physics, KTH Royal Institute of Technology, Isafjordsgatan 22-26, 16640 Kista, Sweden
M. Moeen
Affiliation:
Department of Devices and Circuits, KTH Royal Institute of Technology, Isafjordsgatan 22-26, 16640 Kista, Sweden Nocilis Materials, Isafjordsgatan 39, 16440 Kista, Sweden
A. Abedin
Affiliation:
Department of Devices and Circuits, KTH Royal Institute of Technology, Isafjordsgatan 22-26, 16640 Kista, Sweden
M. S. Toprak
Affiliation:
Department of Materials and Nano Physics, KTH Royal Institute of Technology, Isafjordsgatan 22-26, 16640 Kista, Sweden
H. H. Radamson
Affiliation:
Department of Devices and Circuits, KTH Royal Institute of Technology, Isafjordsgatan 22-26, 16640 Kista, Sweden
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Abstract

In this study, the formation of Ni-(GeSn)x on strained and relaxed Ge1−xSnx (0.01≤x≤ 0.03) nanowires in contact areas has been investigated. The epi-layers were grown at different temperatures (290 to 380°C) by RPCVD technique. The strain in GeSn layers tailored through carefully chosen of growth parameters and virtual substrate. The nanowires were fabricated through both I-line and dry-etching. 15 nm Ni was deposited either on the contact areas or whole length of nanowires. The wires went through rapid thermal annealing at intervals of 360 to 550°C for 30s in N2 ambient. The results show the thermal stability and amount of particular phases were strain-dependent. The formation of Ni-GeSn was eased when GeSn layers were strain-free. When the Sn content is high the epi-layers suffer from Sn segregation. The Sn-rich surface impedes remarkably the Ni diffusion. The electrical conductivity measurement of nanowires shows low resistivity and Ohmic contact are obtained for Ni-GeSn.

Keywords

NiGeSn
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1707: Symposium UU – Semiconductor Nanowires—Synthesis, Properties and Applications , 2014 , mrss14-1707-uu06-03
Copyright
Copyright © Materials Research Society 2014 

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References

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