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Effect of Strain on Bound Excitons in High-Purity ZnSe Bulk and MOCVD Homoepitaxially-Grown ZnSe Layer

Published online by Cambridge University Press:  26 February 2011

Yoshiaki Asao ,
Shunichi Hayamizu ,
Yoichi Yamada ,
Tsunemasa Taguchi  and
Akio Hiraki
Yoshiaki Asao
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, JAPAN.
Shunichi Hayamizu
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, JAPAN.
Yoichi Yamada
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, JAPAN.
Tsunemasa Taguchi
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, JAPAN.
Akio Hiraki
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, JAPAN.
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Abstract

Back-doping experiments with intentional donors (Al, Cl, Ga and In) and acceptor (Na) species have been conducted in the recrystallization travelling-heater-method (THM)-grown ZnSe single crystals. Sharp bound-exciton lines and associated two-electron or two-hole transitions appear clearly and their bind-ing energies can be accurately estimated using central cell corrections. Uni-axial stress measurements on the l1d line at 2.783 eV and on the l2In line at 2.7968eV confirm that the spatial symmetry of the localized centers which bind excitons is Td. Utilizing the present THM ZnSe crystal as a substrate for ZnSe layer with good optical-quality was homoepitxially grown by metalorganic-chemical- vapor-deposition and exhibited a strong donor-bound exciton line locating at 2.7964 eV, probably Al. Low-resistive n-type layer with 0.1ω·cm was achieved by doping with Al from trimethylaluminum source.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 143
Copyright
Copyright © Materials Research Society 1988

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References

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