Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-05T01:38:05.679Z Has data issue: false hasContentIssue false

Effect of strain and growth morphology on the evolution of the domain structure of ferromagnetic manganites

Published online by Cambridge University Press:  15 March 2011

Holly Miller
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, USA School of Engineering, University of Virginia, Charlottesville, VA 22904, USA
J. S. Higgins
Affiliation:
Center for Superconductivity Research, University of Maryland, MD 20742, USA
Y. Mukovskii
Affiliation:
Moscow State Steel and Alloys Institute, Moscow, Russian Federation
R. L. Greene
Affiliation:
Center for Superconductivity Research, University of Maryland, MD 20742, USA
Amlan Biswas
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, USA
Get access

Abstract

The effect of strain on the surface magnetism of the manganite La0.7Sr0.3MnO3 has been studied as a function of temperature, using magnetic force microscopy. The non- uniform strain distribution in the film leads to a two-phase coexistence between ferromagnetic and non-ferromagnetic phases. This leads to a reduction of the surface curie temperature and the formation of ferromagnetic islands. Methods of controlling this behavior in order to fabricate arrays of magnetic nanodots are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Uehara, M., Mori, S., Chen, C. H., Cheong, S.-W., Nature 399, 560 (1999).Google Scholar
2. Podzorov, V., Kim, B. G., Kiryukhin, V., Gershenson, M. E., and Cheong, S-W., Phys. Rev. B 64, 140406 (2001)Google Scholar
3. Zhang, Liuwan, Israel, Casey, Biswas, Amlan, Greene, R. L., and Lozanne, Alex de, Science 298, 805 (2002).Google Scholar
4. Biswas, Amlan, Rajeswari, M., Srivastava, R. C., Venkatesan, T., Greene, R. L., Lu, Q., Lozanne, A. L. de, and Millis, A. J., Phys. Rev. B 63, 184424 (2001).Google Scholar
5. Urushibara, A., Moritomo, Y., Arima, T., Asamitsu, A., Kido, G., and Tokura, Y., Phys. Rev. B 51, 14103 (1995).Google Scholar
6. Soh, Yeong-Ah, Aeppli, G., Kim, C.-Y., Mathur, N. D., and Blamire, M. G., J. Appl. Phys. 93, 8322 (2003).Google Scholar
7. Martin, Y. and Wickramasinghe, H. K., Appl. Phys. Lett. 50, 1455 (1987)Google Scholar
8. Lu, Qingyou, Chen, Chun-Che, and Lozanne, Alex de, Science 276, 2006 (1997)Google Scholar
9. Park, J.-H., Vescovo, E., Kim, H.-J., Kwon, C., Ramesh, R., and Venkatesan, T. Phys. Rev. Lett. 81, 1953 (1998)Google Scholar