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The Effect of Soft Pre-Annealing of Differently Stacked Cu-Sn-Zn Precursors on the Quality of Cu2ZnSnSe4 Absorbers

Published online by Cambridge University Press:  28 August 2013

Monika Arasimowicz ,
Maxime Thevenin  and
Phillip J. Dale
Monika Arasimowicz
Affiliation:
Laboratory for Energy Materials, University of Luxembourg, 41, rue du Brill, L-4422 Belvaux, Luxembourg
Maxime Thevenin
Affiliation:
Laboratory for Photovoltaics, University of Luxembourg, 41, rue du Brill, L-4422 Belvaux, Luxembourg
Phillip J. Dale
Affiliation:
Laboratory for Energy Materials, University of Luxembourg, 41, rue du Brill, L-4422 Belvaux, Luxembourg
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Abstract

Cu2ZnSnSe4 p-type semiconductors currently investigated for use in thin film solar cells can be synthesized by firstly depositing a metallic precursor and secondly annealing the precursor in selenium vapor. Differently stacked Cu-Sn-Zn metallic precursors were characterized after a soft annealing at 350°C under nitrogen atmosphere. For the stack where the Sn and Zn were in direct contact with sufficient Cu to form a stable alloy, a bi-layered structure consisting of Cu-Sn on the bottom and Cu-Zn on the top was formed. Contrarily, when Zn was not in direct contact with Cu, the metals diffused to form a stable alloy and the system segregates horizontally, forming a mixed columnar structure. These two types of precursors were selenized under exactly the same conditions to form kesterite absorbers for solar cell devices. Using this approach the improvement from 0.44% power conversion efficiency for the bi-layered precursor to 4.5% for the mixed precursor was achieved.

Keywords

alloyannealingmicrostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium C – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 123 - 129
Copyright
Copyright © Materials Research Society 2013 

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References

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