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Effect of Silver thickness and Annealing on Optical and Electrical Properties of Nb2O5/Ag/Nb2O5 Multilayers as Transparent Composite Electrode on Flexible Substrate

Published online by Cambridge University Press:  21 May 2013

Aritra Dhar  and
T. L. Alford
Aritra Dhar
Affiliation:
Department of Chemistry and Biochemistry,
T. L. Alford
Affiliation:
Department of Chemistry and Biochemistry, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287
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Abstract

Multilayer structures of Nb2O5/Ag/Nb2O5 have been deposited onto flexible substrates by sputtering at room temperature to develop indium free composite transparent conductive electrodes. The optical and electrical properties of the multilayers are measured by UV–Visible spectroscopy, Hall measurement and four point probe and the effect of Ag thickness has been studied. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm and the multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ω/sq and an average optical transmittance of 86 % at 550 nm. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with 9.5 nm thick Ag layer has the highest FOM with 31.5 x 10-3 Ω/sq, which is one of the best FOM reported till date for room temperature deposition on flexible substrates. The multilayered samples are annealed in vacuum, forming gas, air and O2 environments and the optical and electrical properties are compared against the as-deposited samples.

Keywords

transparent conductorcompositeHall effect
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1552: Symposium S – Nanostructured Metal Oxides for Advanced Applications , 2013 , pp. 101 - 106
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Wan, Q., Dattoli, E. N., and Lu, W., Appl. Phys. Lett. 90, 222107 (2007).CrossRefGoogle Scholar
Gustafsson, G., Cao, Y., Treacy, G.M., Klavetter, F., Colaneri, N., and Heeger, A. J., Nature 357, 477 (1992).CrossRefGoogle Scholar
Look, D. C., Leedy, K. D., Tomich, D. H., and Bayraktaroglu, B., Appl. Phys. Lett. 96, 062102 (2010).CrossRefGoogle Scholar
Guillén, C., Herrero, J., Thin Solid Films 520 (2011) 1 CrossRefGoogle Scholar
El Hichou, A., Kachouane, A., Bubendorff, J. L., Addou, M., Ebothe, J., Troyon, M., and Bougrine, A., Thin Solid Films 458, 263 (2004).CrossRefGoogle Scholar
Han, H., Theodore, N. D., and Alford, T. L., J. Appl. Phys. 105, 123528 (2009).Google Scholar
Lee, C. C., Tien, C. L., and Hsu, J. C. Applied Optics 41, 10 (2002)Google Scholar
Choi, K. H., Kim, J. Y., Lee, Y. S., and Kim, H. J., Thin Solid Films 341, 152 (1999).CrossRefGoogle Scholar
Sinha, M. K., Mukherjee, S. K., Pathak, B., Paul, R. K., Barhai, P. K., Thin Solid Films 515, 1753 (2006).CrossRefGoogle Scholar
Laia, F., Lia, M., Wanga, H., Hua, H., Songc, Y., Jiang, Y. Thin Solid Films 488 (2005) 314 CrossRefGoogle Scholar
Sivaramakrishnan, K. and Alford, T. L., Appl. Phys. Lett. 96, 201109 (2010)CrossRefGoogle Scholar
Haacke, G., J. Appl. Phys. 47, 4086 (1976).CrossRefGoogle Scholar