Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:35:28.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Si Layer in The ZnO Thin Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Hong Seong Kang ,
Jeong Seok Kang ,
Jae Won Kim  and
Sang Yeol Lee
Hong Seong Kang
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
Jeong Seok Kang
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
Jae Won Kim
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
Sang Yeol Lee
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
Get access

Abstract

ZnO thin films and ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300°C in oxygen ambient pressure. The optical and structural properties changed by Si layer in ZnO thin film. UV and visible peak position was shifted by Si layer. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. The optical and structural properties of ZnO thin films and ZnOSi-ZnO multi-layer thin films were characterized by PL (Photoluminescence) and XRD(X-ray diffraction method), respectively. Electrical properties were measured by van der Pauw Hall measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.12
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nahhas, Ahmed, Kim, Hong Koo, Blachere, Fean, Appl. Phys. Lett. 78, 1151(2001).Google Scholar
2. Craciun, V.. Elders, J.. Gardeniers, J. G. E, Boyd, Ian W., Appl. Phy. Lett., 65, 2963 (1994).Google Scholar
3. Srikant, V., D, Clarke, R., J. Appl. Phys., 83. 5447 (1998).Google Scholar
4. Wenas, W. W., Yamada, A., and Takahashi, K., J. Appl. Phys., 70, 7119 (1991).Google Scholar
5. Ohta, H., Kawamura, K., Orita, M., Hirano, M., Sarukura, N., and Hosono, H., Appl. Phys. Lett. 77, 475 (2000).Google Scholar
6. Studenikin, S. A., Cocivera, Michael, Kellner, W. and Pascher, H., Journal of luminescence, 91, 223 (2000).Google Scholar
7. Vanheusden, K., Warren, W. L., Seager, C. H., Tallant, D. R., and Voigt, J. A., Gnade, B. E., J. Appl. Phys. 79, 7983 (1996).Google Scholar
8. Kröger, F. A., The chemistry of imperfect crystals, North-Holland Publishing Company, pp 743–752 (1974).Google Scholar
9. Egehaaf, H.J. and OelKrug, D., Journal of Crystal Growth, 161, 190 (1996).Google Scholar
10. Lin, Bixia, Fu, Zhuxi, Jia, Yundo, Appl. Phy. Lett., 79, 943 (2001).Google Scholar
11. Shim, E. S., Kang, H. S., Kang, J. S., Kim, J. H., Lee, S. Y., Appl. Surface Sci. Vol 186, Issues 1-4, 28, 474–476, (2002).Google Scholar
12. Kang, Hong Seong, Kang, Jeong Seok, Pang, Seong Sik, Shim, Eun Sub, Lee, Sang Yeol, Materials Science and Engineering B (2003) (in press).Google Scholar