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The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers
Published online by Cambridge University Press: 28 February 2011
Abstract
Artificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.
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