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Effect of Sapphire Nitridation on GaN by MOCVD

Published online by Cambridge University Press:  10 February 2011

Dongjin Byun ,
Jaesik Jeong ,
Jae-Inn Lee ,
Byongho Kim ,
Ji-Beom Yoo  and
Dong-Wha Kum
Dongjin Byun
Affiliation:
Division of Metals, Korea Institute of Science and Technology P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Jaesik Jeong
Affiliation:
Division of Metals, Korea Institute of Science and Technology P.O. Box 131, Cheongryang, Seoul 130–650, Korea Dept. of Meterials Science and Engineering, Korea University Anam-Dong 5-Ka, Sungbook-Ku, Seoul 136–701, Korea.
Jae-Inn Lee
Affiliation:
Division of Metals, Korea Institute of Science and Technology P.O. Box 131, Cheongryang, Seoul 130–650, Korea Dept. of Materials Engineering, Sung Kyun Kwan University 300 Chungchun-Dong, Jangan-Ku, Suwon 440–746, Korea
Byongho Kim
Affiliation:
Dept. of Meterials Science and Engineering, Korea University Anam-Dong 5-Ka, Sungbook-Ku, Seoul 136–701, Korea.
Ji-Beom Yoo
Affiliation:
Dept. of Materials Engineering, Sung Kyun Kwan University 300 Chungchun-Dong, Jangan-Ku, Suwon 440–746, Korea
Dong-Wha Kum
Affiliation:
Division of Metals, Korea Institute of Science and Technology P.O. Box 131, Cheongryang, Seoul 130–650, Korea
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Abstract

Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal. Reduction of defect density is accomplished by proper choice of the substrate or deliberate modification of substrate surface. Roughness of substrate surface for GaN deposition can be controlled by buffer growth and/or nitridation. Buffer layers or nitrided layers promote lateral growth of films due to decrease in interfacial free energy between the film and substrate. Optimum conditions for nitridation and GaN-buffer growth on Al2O3(0001) were determined by means of atomic force microscopy (AFM). AFM analysis of nitridated sapphire surfaces was also carried out to find the optimum condition for nitridation of sapphire substrate before GaN-buffer layer deposition. Nitridation of sapphires was performed only with nitrogen. Based on the fact that GaN deposited on modified surface exhibited the better crystal quality and optical property, use of AFM roughness as a reliable criterion is suggested for process optimization of GaN film growth by metallorganic chemical vapor deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 59
Copyright
Copyright © Materials Research Society 1997

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