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The Effect of Reactor Pressure on the Growth of Glow Discharge a-SiN:H

Published online by Cambridge University Press:  21 February 2011

W. J. Varhue  and
K. A. Pandelisev
W. J. Varhue
Affiliation:
Dept. of Electrical Engineering, University of Vermont, BurlingtonVT. 05405
K. A. Pandelisev
Affiliation:
Johnson Matthey Electronics Limited, E. 15128 Euclid Ave., Spokane, WA 99216
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Abstract

The electrical resistivity and N content of a-SiN:H films can be controlled by varying the reactor pressure. This appears to be a result of the increased dissociation of the ammonia feed gas by the change in the electron energy spectrum. The effect of ion bombardment of the substrate surface does not result in observable changes in film quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 29
Copyright
Copyright © Materials Research Society 1990

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