Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-19T02:14:30.566Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Rapid Thermal Processing on Oxygen Precipitation in Silicon

Published online by Cambridge University Press:  26 February 2011

G. A. Hawkins  and
J. P. Lavine
G. A. Hawkins
Affiliation:
Electronics Research Laboratories, Photographic Products Group, Eastman Kodak Company, Rochester, NY 14650
J. P. Lavine
Affiliation:
Electronics Research Laboratories, Photographic Products Group, Eastman Kodak Company, Rochester, NY 14650
Get access

Abstract

The precipitation of oxygen in silicon can be initiated by both homogeneous and heterogeneous nucleation mechanisms. Homogeneous nucleation has been studied in much greater detail; however, in some cases, superior contaminant gettering has been reported for precipitation processes believed to be based on heterogeneous nucleation. In this study, we use rapid thermal annealing (RTA) to demonstrate conclusively that the nucleation mechanism for one such process is, in fact, heterogeneous. We also investigate the sensitivity of precipitation to slight alterations in thermal process steps. We interpret our results in terms of point-defect-induced changes in the critical radius (Rc) for precipitate growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 197
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Anagnostopoulos, C.N. et al., Proceedings of the Electrochemical Society Meeting, Toronto, May 1985.Google Scholar
2.Lavine, J.P. et al., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, edited by Mikkelsen, J.C. Jr et al. (Mater. Res. Soc. Proc. 59, Pittsburgh, PA 1986), pp. 301–307.Google Scholar
3.Inoue, N., Osaka, J., Wada, K., J. Electrochem. Soc. 129, 2780 (1982).Google Scholar
4.Hu, S.M., J. Appl. Phys. 51, 3666 (1980).Google Scholar
5.Pearce, C.W., in Impurity Diffusion and Gettering in Silicon, edited by Fair, R.B., Pearce, C.W., Washburn, J. (Mater. Res. Soc. Proc. 36, Pittsburgh, PA 1985), pp. 231–237.Google Scholar
6.Hawkins, G.A. and Lavine, J.P., to be published.Google Scholar
7.Tan, T.Y., in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, edited by Mikkelsen, J.C. Jr et al. (Mater. Res. Soc. Proc. 59, Pittsburgh, PA 1986), pp. 269–279; J. van Hellemont and C. Claeys, accepted for publication, J. Appl. Phys.Google Scholar
8.Bronner, G.B. and Plummer, J.D., J. Appl. Phys. 61, 5286 (1987).Google Scholar