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Effect of Preparation Conditions on the Silicon L-Edge In Electrochemically Prepared Porous Silicon

Published online by Cambridge University Press:  25 February 2011

T. Van Buuren ,
T. Tiedje  and
W. Weydanz
T. Van Buuren
Affiliation:
Department of Physics, University of British Columbia Vancouver, BC, V6T 1Z1
T. Tiedje
Affiliation:
Department of Physics, University of British Columbia Vancouver, BC, V6T 1Z1 Department of Electrical Engineering, University of British Columbia Vancouver, BC, V6T 1Z1
W. Weydanz
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, V5A 1S6
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Abstract

High resolution measurements of the silicon L-edge absorption in electrochemically prepared porous silicon show that the absorption threshold is shifted to higher energy relative to bulk silicon, and that the shift is dependent on how the porous silicon is prepared. When the porous silicon is made from n-type material with light exposure, the blue shift increases logarithmically with the anodizing current. Porous silicon prepared by anodizing p-type silicon exhibits a blue shift in the L-edge which increases with the time spent in the HF solution after the anodizing potential is turned off. The data are consistent with the quantum confinement model for the electronic structure of porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 283
Copyright
Copyright © Materials Research Society 1993

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References

references

1. Zhang, X. G. J. Electrochem. Soc. 138, 3750 (1991).; P. C. Searson, J. M. Macauly, F. M. Ross, J. Appl. Phys. 72, 253 (1992).CrossRefGoogle Scholar
2. Lehmann, V., Gosele, U., Appl. Phys. Lett. 58, 856 (1991)..CrossRefGoogle Scholar
3. Buuren, T. van, Gao, Y., Tiedje, T., Dahn, J. R., Way, B. M., Appl. Phys. Lett. 60, 3013 (1992).CrossRefGoogle Scholar
4. Doan, V. V., Sailor, M. J., Science 256, 1791 (1992).CrossRefGoogle Scholar
5. Buuren, T. van, Tiedje, T., Dahn, J. R., Way, B. M. (to be published).Google Scholar
6. Noguchi, N., Suemune, I., Appl. Phys. Lett. 62, 1429 (1993).CrossRefGoogle Scholar
7. Voos, M., Uzan, Ph., Delalande, C., Bastard, G., Halimaoui, A., Appl. Phys. Lett. 61, 1213 (1992).CrossRefGoogle Scholar
8. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).CrossRefGoogle Scholar
9. Walle, C. G. van der, Northrup, J. E. Phys. Rev. Lett. 70, 1116 (1993).CrossRefGoogle Scholar