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The Effect of Polysilicon Doping (Using Ion Implantation or PBr3 Diffusion or Insitu Doping) on TiSi2 Formation
Published online by Cambridge University Press: 25 February 2011
Abstract
In this work we have studied the effect of polysilicon doping on titanium disilicide (TiSi2) formation using extensive physical and electrical characterization.
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- Copyright © Materials Research Society 1992
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