Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:32:32.150Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Plasma Treatment on the SiO2 film fabricated without Substrate Heating for Flexible Electronics

Published online by Cambridge University Press:  01 February 2011

Sun-Jae Kim ,
Sang-Myeon Han ,
Seung-Hee Kuk ,
Dong-Won Kang  and
Min-Koo Han
Sun-Jae Kim
Affiliation:
[email protected], Seoul National University, School of electrical engineering, 130-305, Seoul National University, Kwanak-Gu, Seoul, N/A, Korea, Republic of, 82-2-880-7992, 82-2-871-7992
Sang-Myeon Han
Affiliation:
[email protected], Samsung electronics, Asan, N/A, Korea, Republic of
Seung-Hee Kuk
Affiliation:
[email protected], Seoul National University, Seoul, N/A, Korea, Republic of
Dong-Won Kang
Affiliation:
[email protected], Seoul National University, Seoul, N/A, Korea, Republic of
Min-Koo Han
Affiliation:
[email protected], Seoul National University, Seoul, N/A, Korea, Republic of
Get access

Abstract

Silicon dioxide (SiO2) films were deposited on crystalline silicon substrate by inductively coupled plasma chemical vapor deposition (ICP-CVD). In this paper, various process parameter-gas flow rate, ICP RF power, Process pressure were discussed for the investigation of refractive index. And some properties of the SiO2 film are investigated. Since there was no external substrate heating during the deposition, the SiO2 film showed poor electrical characteristics, such as shifted flat-band voltage and high effective charge density. We have proposed He plasma pre-treatment in order to reduce the interface fixed charge and some post-treatment. Our experimental results shows that He plasma pre-treatment supply thermal energy for decomposition of reactant gas and to remove effective charges. Hydrogen post-treatment also enhances electrical characteristics. We measured the effect of the plasma treatment using FT-IR spectrum and C-V characteristics.

Keywords

oxidechemical vapor deposition (CVD) (deposition)dielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1078: Symposium M – Materials and Technology for Flexible, Conformable and Stretchable Sensors and Transistors , 2008 , 1078-M08-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yuda, K., Sera, K., Uesugi, F., Nishiyama, I., Okumura, F., Int. Electron Dev. Meeting (IEDM), San Francisco, USA, 1994, p. 519.Google Scholar
2. Hopwood, J., Plasma Sources Sci. Technol. 1 (1992), p. 109.Google Scholar
3. Keller, J.H., Plasma Sources Sci. Technol. 5 (1996), p. 166.Google Scholar
4. Gosain, D.P., Noguchi, T. and Usui, S., Jpn. J. Appl. Phys. 39 (2000), p. L179.Google Scholar
5. Nicollian, E.H. and Brews, J.R., MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons (1982).Google Scholar
6. Schroder, Dieter K., Semiconductor Material and Device Characterization, 2nd edition, John Wiley and Sons, 1998, p337–368 Google Scholar
7. Batey, J. and Tierney, E., J.Appl.Phys. 60(9) (1986),p.3136 Google Scholar
8. Shin, M.Y., Han, S.M., Lee, M.C., Shin, H.S., Han, M.K., Kwon, J.Y., Noguchi, T., “High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment”, MRS PROCEEDINGS, 2004 Google Scholar
9. Han, S., Shin, M., Lee, M., Park, J. and Han, M., Electrochemical and Solid-State Letters, 9 (2) H5–H7 (2006)Google Scholar