Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-24T03:13:54.678Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Partial Oxygen Pressure on Structural, Electrical, and Magneto transport Properties of Cobalt Doped Indium Oxide Thin Films

Published online by Cambridge University Press:  31 January 2011

Abhijit Ghosh ,
N. Ukah ,
R K Gupta ,
P K Kahol  and
K Ghosh
Abhijit Ghosh
Affiliation:
[email protected], Missouri State University, Physics, Astronomy, & Material Science, Springfield, Missouri, United States
N. Ukah
Affiliation:
[email protected], Missouri State University, Physics, Springfield, Missouri, United States
R K Gupta
Affiliation:
[email protected], Missouri State University, Springfield, United States
P K Kahol
Affiliation:
[email protected], United States
K Ghosh
Affiliation:
[email protected], Missouri State University, Physics, Astronomy and Materials Science, Springfield, Missouri, United States
Get access

Abstract

Dilute magnetic semiconductors are ferromagnetic semiconductors recently discovered in nitride and oxide semiconductors by incorporating a small percentage of magnetic atoms into the semiconductors host. Recently it is reported that the structural and electrical properties of pure indium oxide can be modified by growth parameters. In this paper we investigate magneto-transport properties of Co-doped In2O3 dilute magnetic semiconductors thin films grown on sapphire and quartz substrates using pulsed laser deposition technique. The effect of partial oxygen pressure on structural, electrical, optical, and magneto-transport properties was discussed in details. The crystallinity of the films largely depends on growth temperature. Magneto-transport properties such as temperature dependent resistivity and magneto-resistance were found to be very sensitive to the micro-structural properties such as crystalinity as well as oxygen defect. The electrical carrier density of the films depends on oxygen pressure and a change of two orders of magnitude is observed. Depending on growth parameters, both positive and negative magneto-resistance is observed. Optical band-gap seems to vary with the growth partial oxygen pressure.

Keywords

ablationelectrical propertiesmagnetoresistance (transport)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1183: Symposium FF – Novel Materials and Devices for Spintronics , 2009 , 1183-FF06-15
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

i Kahol, P. K., Gupta, R. K., Ghosh, K., Conference Proceedings, American Institute of Physics, 1063 (2008) 177.Google Scholar
ii Shim, I.B., Kim, C.S., J. Mag. Mag. Mater. 272–276 (2004) e1571.Google Scholar
iii Peleckis, G., Wang, X.L., Dou, S.K., J. Mag. Mag. Mater. 301 (2006) 308.Google Scholar
iv Minami, T., MRS Bull. 25 (2000) 38.Google Scholar
v Gupta, R. K., Ghosh, K., Mishra, S. R., Kahol, P. K., J Optoelectron. Adv. Mater. 9 (2007) 2211.Google Scholar
vi Coutal, C., Azema, A., Roustan, J.C., Thin Solid Films 288 (1996) 248.Google Scholar
vii Philip, J., Theodoropoulou, N., Moodera, J.S., Satpati, B., Appl. Phys. Lett. 85 (2004) 777.Google Scholar
viii Kim, H.S., Ji, S.H., Hong, S.K., Kim, D., Ihm, Y.E., Choo, W.K., Solid State Commun. 137 (2006).Google Scholar
ix Tauc, J., (Amorphous and Liquid Semiconductors), (Plenum, London, 1974).Google Scholar
x David, E. A., and Mott, N. F., Philos. Mag. 22, 903 (1970).Google Scholar
xi Lu, J. G., Ye, Z. Z., Wang, L., Huang, J. Y., and Zhao, B. H., Mater. Sci. Semicond. Process 5, 491 (2003).Google Scholar
xii Tan, S.T., Sun, X.W., Zhang, X.H., Chen, B.J., Chua, S.J., Yong, Anna, Dong, Z.L., and Hu, X. J. Cryst. Growth 290, 518 (2006).Google Scholar
xiii 10 Pauw, L.J.Van der, Philips Res. Rep. 13 (1958) 1.Google Scholar
xiv Oiwa, A., Endo, A., Iye, Y., Ohno, H., and Munekata, H., Phys. Rev. B 59, 5826 (1999).Google Scholar
xv Sivan, U., Entin-Wohlman, O., and Imry, Y., Phys. Rev. Lett. 60, 1566 (1988).Google Scholar
xvi Zhang, Y. and Sarachik, M. P., Phys. Rev. B 43, 7212 (1991).Google Scholar
xvii Efros, A. L., and Shklovskii, B. I., J. Phys. C 8, L49 (1975).Google Scholar