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The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry

Published online by Cambridge University Press:  01 February 2011

Yuichi Yamamoto ,
Takaaki Kozuki ,
Shunichi Shibuki ,
Keiichi Maeda ,
Yasuaki Inoue ,
Shinji Tawara  and
Naoki Toge
Yuichi Yamamoto
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Takaaki Kozuki
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Shunichi Shibuki
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Keiichi Maeda
Affiliation:
Semiconductor Technology Development Group., Sony Corporation, Atsugi, Kanagawa, Japan.
Yasuaki Inoue
Affiliation:
Technical Dept., Noritake Super Abrasive LTD., Ukiha-gun, Fukuoka, Japan.
Shinji Tawara
Affiliation:
Technical Dept., Noritake Super Abrasive LTD., Ukiha-gun, Fukuoka, Japan.
Naoki Toge
Affiliation:
Technical Dept., Noritake Super Abrasive LTD., Ukiha-gun, Fukuoka, Japan.
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Abstract

A ceria-based in-situ conditioning process was successfully developed. A new single layered metal bonded conditioner was developed to solve problems encountered in implementing ceria based in-situ conditioning process. The planarity was significantly improved compared with that of conventional Ni-plated in-situ conditioning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W3.5
Copyright
Copyright © Materials Research Society 2005

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References

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