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Effect of Oxygen on Radiation-Enhanced Diffusion in Silicon

Published online by Cambridge University Press:  15 February 2011

V.E. Borisenko
V.E. Borisenko*
Affiliation:
Minsk Radioengineering Institute, P.Browka 6, Minsk, Ussr
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Abstract

Low-energy ion bombardment has been used to enhance diffusion of phosphorus and antimony atoms in silicon. Oxygen free silicon crystals both containing phosphorus and antimony doped surface layers and original crystals were bombarded at 400–700°C with 400 eV oxygen or argon ions. Impurity and electrical carrier profiles were measured to analyse the role of oxygen in the radiationenhanced diffusion. The results obtained are explained on assuming complexes such as vacancyoxygen and vacancy-substitutional impurity to be involved in the process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 159
Copyright
Copyright © Materials Research Society 1982

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References

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