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Effect of oxygen on nanoscale indentation-induced phase transformations in amorphous silicon

Published online by Cambridge University Press:  31 January 2011

Simon Ruffell  and
Jim Williams
Simon Ruffell
Affiliation:
[email protected], Australian National University, Canberra, Australian Capital Territory, Australia
Jim Williams
Affiliation:
[email protected], Australian National University, Canberra, Australian Capital Territory, Australia
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Abstract

Ion-implantation has been used to introduce oxygen concentration-depth profiles into nominally oxygen-free amorphous silicon (a-Si). The effect of O concentrations in excess of 1018 cm−3 on the formation of high pressure crystalline phases (Si-III and Si-XII) during indentation unloading has been studied. By examination of unloading curves and post-indent Raman micro-spectroscopy O is found to inhibit the so-called pop-out event during unloading and, therefore, the formation of the crystalline phases. Furthermore, at high O concentrations (> 1021 cm−3) the formation of these phases is reduced significantly such that under indentation conditions used here the probability of forming the phases is reduced to almost zero. We suggest that the bonding of O with Si reduces the formation of Si-III/XII during unloading through a similar mechanism to that of oxygen-retarded solid phase crystallization of a-Si.

Keywords

Siphase transformationion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1185: Symposium II – Probing Mechanics at Nanoscale Dimensions , 2009 , 1185-II02-07
Copyright
Copyright © Materials Research Society 2009

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