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Effect of Nitrogen and Oxygen Impurities on Tantalum Silicide Formation

Published online by Cambridge University Press:  22 February 2011

K. T. Ho ,
C.-D. Lien ,
M-A. Nicolet  and
D. M. Scott
K. T. Ho
Affiliation:
California Institute of Technology, Pasadena, California 91125, U.S.A.
C.-D. Lien
Affiliation:
California Institute of Technology, Pasadena, California 91125, U.S.A.
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California 91125, U.S.A.
D. M. Scott
Affiliation:
University of California at San Diego, La Jolla, California 92093, U.S.A.
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Abstract

Tantalum, being a refractory metal, is sensitive to ambient impurities when forming a silicide. By introducing nitrogen and oxygen impurities into a tantalum-silicon system, interesting chemical and physical effects are observed in their subsequent reactions. Nitrogen and oxygen behave similarly in such a system. If initially present in Ta, they segregate into the still unreacted Ta as the silicide layer grows at a somewhat retarded rate. The same impurities, initially present in Si, are immobile in the form of stable compouis and suppress TaSi2 growth. The rare isotopes 15N and 18O are introduced bY implantation and Profiled by 15N(P,α)12C and 18O(P,α)15N nuclear reaction analyses, respectively. In addition, unintentionally incorporated 18O is checked by the 16O(d,α) 14N nuclear reaction. The results are explained in terms of the moving species Si, and of the chemical affinity, solubility and diffusivity of the impurities in their host lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 123
Copyright
Copyright © Materials Research Society 1984

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References

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