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Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM

Published online by Cambridge University Press:  27 February 2015

Neeraj Panwar ,
Pankaj Kumbhare ,
Ajit K. Singh ,
N. Venkataramani  and
Udayan Ganguly
Neeraj Panwar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Pankaj Kumbhare
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Ajit K. Singh
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
N. Venkataramani
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
Udayan Ganguly
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra, 400076, India
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Abstract

We have demonstrated that pulsed laser deposition (PLD) conditions, i.e. O2 partial pressure (pO2) and temperature (T), enable control over the polarity of resistance switching in PCMO (Pr0.7C0.3MnO3) i.e. unipolar resistive switching (URS) vs. bipolar resistive switching (BRS). We observe by detailed physical characterization that BRS occurs in poly-crystalline thin films while URS is seen in amorphous films – indicating the materials origin of URS vis-a-vis BRS. BRS shows attractive lower voltage operation, no forming and lower variability than URS.

Keywords

laser ablationmemorythin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 47 - 52
Copyright
Copyright © Materials Research Society 2015 

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References

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