Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:16:18.361Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Mo Doping on Formation of Ti-Silicide Phases Studied by HRTEM

Published online by Cambridge University Press:  10 February 2011

M. A. Gribelyuk ,
S. B. Samavedam  and
J. A. Kittl
M. A. Gribelyuk
Affiliation:
[email protected]
S. B. Samavedam
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. A. Kittl
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, TX 75243
Get access

Abstract

The phase sequence of the RTP induced reaction at T=650°C has been studied. We found that pre-amorphization of poly-Si substrates does not change the reaction path. i.e. Ti5Si4, and C-49 TiSi2 phases were formed_ with the latter growing upon further anneal. In the Mo doped poly-Si/Ti system the C-54 TiSi2 phase has formed along with Ti5Si4 and two Mo silicide phases, MoSi2 and Mo5Si3; no C-49 TiSi2 was observed. We show that the reaction in the Mo doped system follows the template mechanism with MoSi2 and Mo5Si3 based phase acting as template phases for accelerated growth of C-54 TiSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 91
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wang, M. H., Chen, L.J., J.Appl.Phys. 71, 5918 (1992)Google Scholar
[2] Ma, Z., Allen, L. H., Phys.Rev.B 49, 13501 (1994)10.1103/PhysRevB.49.13501Google Scholar
[3] Kittl, J.A., Prinslow, D.A., Apte, P.R., Pas, M.F., Appl.Phys.Lett. 67, 2308 (1995)Google Scholar
[4] Mann, R.W., Miles, G.L., Knotts, T.A., Rakowski, D.W., Clevenger, L.A., Harper, J.M.E., D'Heurle, F.M. and Cabral, C. Jr., Appl.Phys.Lett. 67, 3729 ( 1995)10.1063/1.115364Google Scholar
[5] Mouroux, A., Zhang, S. -L., Kaplan, W., Nygren, S., Östling, M., Petersson, C. S., Appl.Phys.Lett 69, 975 ( 1996)10.1063/1.117100Google Scholar
[6] Kittl, J.A., Hong, Q.Z., Rodder, M. and Breedijk, T., IEDM.Tech.Dig., 111 (1997)Google Scholar
[7] Diffraction data, JCPDS 6–607 or 7–331Google Scholar
[8] Kittl, J. A., Hong, Q. Z., Rodder, M., Prinslow, D. A. and Misium, G., VLSI Tech. Dig., 14 (1996)Google Scholar
[9] Stadelman, P. A., Ultramicroscopy 21 (1987) 131 10.1016/0304-3991(87)90080-5Google Scholar
[10] Diffraction data, JCPDS 27–907Google Scholar
[ 11] Diffraction data, JCPDS 34–371Google Scholar
[12] Diffraction data, JCPDS 6–0681Google Scholar