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Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

G. S. Sudhir ,
Y. Peyrot ,
J. Krüger ,
Y. Kim ,
R. Klockenbrink ,
C. Kisielowski ,
M. D. Rubin ,
E. R. Weber ,
W. Kriegseis  and
B. K. Meyer
G. S. Sudhir
Affiliation:
MSME Department, U. C. Berkeley, Berkeley, CA 94720 [email protected]
Y. Peyrot
Affiliation:
MSME Department, U. C. Berkeley, Berkeley, CA 94720
J. Krüger
Affiliation:
MSME Department, U. C. Berkeley, Berkeley, CA 94720
Y. Kim
Affiliation:
MSME Department, U. C. Berkeley, Berkeley, CA 94720
R. Klockenbrink
Affiliation:
MSME Department, U. C. Berkeley, Berkeley, CA 94720
C. Kisielowski
Affiliation:
MSME Department, U. C. Berkeley, Berkeley, CA 94720
M. D. Rubin
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
MSME Department, U. C. Berkeley, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
W. Kriegseis
Affiliation:
Justus-Liebig-Universitt Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
B. K. Meyer
Affiliation:
Justus-Liebig-Universitt Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
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Abstract

This study analyzes the impact of most common impurities and dopants on the c lattice parameter for thin films of Gallium Nitride (GaN) deposited on basal plane sapphire. Both Mg (∼1017 cm-3) and Zn (∼3 × 1020 cm-3) doping were found to expand the c lattice parameter as much as +0.38% and +0.62%, respectively. On the contrary, Oxygen up to concentrations 9 1021 cm-3 is shown to replace N in GaN thin films reducing the c parameter only by a small amount. Incorporation of Si leads to a large decrease of the c parameter which can not be attributed to the different size of Ga and Si atom. It is suggested that doping alters the film stoichiometry by a predicted Fermi level dependence of defect formation energies. The impact of stoichiometry on c lattice parameter and the effect of hydrostatic strain on resistivity in undoped and doped GaN is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 525
Copyright
Copyright © Materials Research Society 1998

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