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Effect of Low Level Photoionization in Solid Phase Epitaxial Regrowth of Amorphous Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
In this work we searched for evidence of low level photoionization effects in the solid phase epitaxial regrowth (SPER) of intrinsic amorphous silicon on (100) silicon during isothermal furnace annealing. We used in situ cw laser interferometry to measure the changes in the rate at 500 °C as the laser power was varied from 20 mW-80 mW. Calculation showed that laser heating increased the sample temperature by a maximum of 6 °C at 80 mW. The measured change of the SPER rate with laser power in this range was always smaller than the change computed from an Arrhenius calculation using the measured activation energy, and the calculated value of the laser-produced increment in the sample temperature. The result indicates that there are negligible low level photoionization effects in silicon SPER.
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- Copyright © Materials Research Society 1992