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Effect of Low Level Photoionization in Solid Phase Epitaxial Regrowth of Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Young-Jin Jeon ,
M. F. Becker  and
R. M. Walser
Young-Jin Jeon
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX. 78712, U.S.A.
M. F. Becker
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX. 78712, U.S.A.
R. M. Walser
Affiliation:
J.H. Herring Centennial Professor in Engineering, The University of Texas, Austin, TX. 78712, U.S.A.
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Abstract

In this work we searched for evidence of low level photoionization effects in the solid phase epitaxial regrowth (SPER) of intrinsic amorphous silicon on (100) silicon during isothermal furnace annealing. We used in situ cw laser interferometry to measure the changes in the rate at 500 °C as the laser power was varied from 20 mW-80 mW. Calculation showed that laser heating increased the sample temperature by a maximum of 6 °C at 80 mW. The measured change of the SPER rate with laser power in this range was always smaller than the change computed from an Arrhenius calculation using the measured activation energy, and the calculated value of the laser-produced increment in the sample temperature. The result indicates that there are negligible low level photoionization effects in silicon SPER.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 57
Copyright
Copyright © Materials Research Society 1992

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