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Effect of Low Energy Implantation on the Properties of Ti/Ni/Au Contacts to n-SiC

Published online by Cambridge University Press:  17 March 2015

Patrick W Leech ,
Anthony S Holland ,
Geoffrey K Reeves ,
Yue Pan ,
Mark Ridgway  and
Phillip Tanner
Patrick W Leech
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Anthony S Holland
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Geoffrey K Reeves
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Yue Pan
Affiliation:
School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, 3001, Australia
Mark Ridgway
Affiliation:
Electronic Materials Engineering, Australian National University, Canberra, ACT, Australia.
Phillip Tanner
Affiliation:
Griffith University, Queensland Microtechnology Facility, Brisbane, Australia.
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Abstract

The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 x 10−6 Ω.cm2. The value of ρc increased significantly at an implant dose of 1 x 1015 ions/cm2. The dependence of ρc on ion dose has been measured using both C and P implant species.

Keywords

ion-implantationsemiconductingmicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1743: Symposium DD/WW – Materials and Radiation Effects for Advanced Nuclear Technologies , 2015 , mrsf14-1743-ww12-10
Copyright
Copyright © Materials Research Society 2015 

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References

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