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The Effect of Light Soaking on Electron Mobilities in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Homer Antoniadis ,
Qi Wang ,
E. A. Schiff  and
S. Guha
Homer Antoniadis
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 182JH-1130
Qi Wang
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 182JH-1130
E. A. Schiff
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 182JH-1130
S. Guha
Affiliation:
United Solar Systems Corporation, 1100 W. Maple Road, Troy, MI 48084
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Abstract

Electron drift mobilities μe were measured in undoped hydrogenated amorphous silicon specimens for different light soaking states. Standard transient photocurrent and time-of-flight techniques were employed; the light soaking state was monitored using the electron deep-trapping mobility-lifetime product μτe,t. Two different measurement series are reported. The first series measured a specimen from the reactor at Syracuse at room-temperature. No significant effects of light soaking on μe were found. The second series measured a solar-optimized specimen from Energy Conversion Devices, Inc. below 200°K. In these measurements we found a decrease in μe of about a factor 3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 33
Copyright
Copyright © Materials Research Society 1991

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References

1. Staebler, D. L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2. Street, R. A., Appl. Phys. Lett. 42, 507 (1983).Google Scholar
3. Johnson, A. M., Auston, D. H., Smith, P. R., Bean, J. C., Harbison, J. B., and Adams, A. C., Phys. Rev. B 23, 6816 (1981).CrossRefGoogle Scholar
4. Takada, J. and Fritzsche, H., Phys. Rev. B 36, 1706 (1987).CrossRefGoogle Scholar
5. Antoniadis, Homer and Schiff, E.A., Phys. Rev. B 43, in press.Google Scholar
6. Street, R.A., Appl. Phys. Lett. 41, 1060 (1982).Google Scholar
7. Hotaling, S.P., Antoniadis, Homer and Schiff, E. A., Solar Cells 27, 357 (1989).Google Scholar
8. Hotaling, S.P., Antoniadis, Homer and Schiff, E. A., J. Non-Cryst. Solids 114, 420 (1989).Google Scholar
9. Park, H. R., Liu, J. Z. and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989), and references therein.Google Scholar
10. Street, R. A., Phys. Rev. 27, 4924 (1983).Google Scholar
11. Steemers, H., Spear, W. E. and Comber, P. G. Le, Phil. Mag. B 47, L83 (1983).Google Scholar
12. Scher, H., Shlesinger, M. F. and Bendler, J. T., Phys. Today 44–1, 26 (1991), and references therein.Google Scholar
13. Roedern, Bolko von, Inter. Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, pub. by AIP Conf. Proc, Denver, (1991).Google Scholar