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The Effect of Light Soaking on Electron Mobilities in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Homer Antoniadis ,
Qi Wang ,
E. A. Schiff  and
S. Guha
Homer Antoniadis
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 182JH-1130
Qi Wang
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 182JH-1130
E. A. Schiff
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 182JH-1130
S. Guha
Affiliation:
United Solar Systems Corporation, 1100 W. Maple Road, Troy, MI 48084
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Abstract

Electron drift mobilities μe were measured in undoped hydrogenated amorphous silicon specimens for different light soaking states. Standard transient photocurrent and time-of-flight techniques were employed; the light soaking state was monitored using the electron deep-trapping mobility-lifetime product μτe,t. Two different measurement series are reported. The first series measured a specimen from the reactor at Syracuse at room-temperature. No significant effects of light soaking on μe were found. The second series measured a solar-optimized specimen from Energy Conversion Devices, Inc. below 200°K. In these measurements we found a decrease in μe of about a factor 3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 33
Copyright
Copyright © Materials Research Society 1991

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