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Effect of Laser Irradiation on Carbon-Implanted Copper Substrates

Published online by Cambridge University Press:  25 February 2011

Rajiv K. Singh  and
John Viatella
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611–2066
John Viatella
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611–2066
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Abstract

We have analyzed the non-equilibrium thermal effects of pulsed nanosecond lasers on carbon-implanted copper substrates. The thermal effects of pulsed nanosecond lasers were simulated by numerically solving the heat flow equation and taking into account the phase changes which occur at the surface of the irradiated solid. Intense pulsed laser irradiation induces rapid heating at the near surface resulting in melting, followed by rapid quenching of the melt phase. The effect of laser variables (energy density, etc.) on the maximum melt depth, melt-in and solidification velocities and transient temperature profiles have been computed. Maximum melt depths and the surface temperatures were found to increase approximately in a linear manner with pulse energy density. Extremely high average solidification velocities (20–45 m/sec) were calculated which may give rise to solute trapping and other non-equilibrium segregation effects. The change in laser-irradiated characteristics of copper substrates as a result of carbon-ion implantation is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 79
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Narayan, J., Godbole, V. P. and White, C. W., Science, 252, 416 (1991)Google Scholar
2. Baeri, P., Campisano, S., Fotí, G., and Rimini, R., J. Appl. Phys. 50, 788 (1979)Google Scholar
3. Wood, R. F. and Giles, G. E., Phys. Rev B, 23, 2923 (1981)Google Scholar
4. Singh, R. K. and Narayan, J., Materials Science and Engr. B3. 217 (1989)Google Scholar
5. White, C. W., in Pulsed Laser processing of Semiconductors, Eds. Wood, R.F., White, C. W. and Young, R. T., Academic Press NY 1984 pg.44 Google Scholar
6. Singh, R. K., Appl. Phys. Lett. 59, 2115 (1991)Google Scholar
7. SLIM is a commercially available.personal computer based simulation routine developed by Singh, R.K. and Viatella, J. at the University of Florida. For more information please contact the authors, at (904)392–1032 Google Scholar
8. Richtmeyer, R. D., Difference methods for initial value problems, Interscience” NY 1957 Google Scholar
9. Touloukian, Y. S. (Eds), Thermophysical properties of Matter, IFI Plenum Press, NY (1970)Google Scholar
10. Von Allmen, M. F., in Physical processes in Laser-Materials Interactions, Bertolotti, M. Eds. Plenum press, N.Y. 1982, pg. 49 (1959)Google Scholar
11. See for example, “Laser-solid interactions” editors Narayan, J. et. al. MRS. Vol 13, 1984 Google Scholar