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Effect of Ion-beam Radiation on the Anisotropy of Resistivity in YBa2Cu3O7-δ Thin Films

Published online by Cambridge University Press:  22 February 2011

J. Z. Wu ,
Z. H. Zhang ,
V. W. Chen ,
N. Yu  and
W. K. Chu
J. Z. Wu
Affiliation:
Current Address: Department of Physics & Astronomy, University of Kansas, Lawrence, KS 66045
Z. H. Zhang
Affiliation:
Texas Center for Superconductivity and Department of Physics University of Houston, Houston, TX 77204
V. W. Chen
Affiliation:
Texas Center for Superconductivity and Department of Physics University of Houston, Houston, TX 77204
N. Yu
Affiliation:
Los Alamos National Laboratory, MS K762, Los Alamos, NM 87545
W. K. Chu
Affiliation:
Texas Center for Superconductivity and Department of Physics University of Houston, Houston, TX 77204
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Abstract

Different behaviors of the normal-state resistivity have been observed in (110)-, (113)- and a-oriented YBa2Cu3O7-δ thin films under 200 keV H+ irradiation. It suggests that the c-axis electrical conduction is very sensitive to nonoxygen point defects and a ”semiconductor-metal” phase transition could be induced at very low densities of these defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 63
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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