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Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

Published online by Cambridge University Press:  16 February 2011

Kyung Ha Lee ,
Byeong Yeon Moon ,
Yoo Chan Chung ,
Seung Min Lee ,
Sung Chul Kim ,
Donggil Kim  and
Jin Jang
Kyung Ha Lee
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Byeong Yeon Moon
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Yoo Chan Chung
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Seung Min Lee
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sung Chul Kim
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Donggil Kim
Affiliation:
Anyang Research Lab., GoldStar, Anyang-shi, Kyungki-do, Korea
Jin Jang
Affiliation:
Dept. of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
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Abstract

We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) Amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10−2 and > 10−4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-S.i.H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 469
Copyright
Copyright © Materials Research Society 1994

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References

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