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Effect of Interfaces on the Properties of Polycrystalline Thin-Film PZT Ferroelectric Capacitors
Published online by Cambridge University Press: 26 February 2011
Abstract
A photocurrent directed opposite to ferroelectric (FE) polarization is observed in short-circuit thin-film polycrystalline Pt/PZT/Ir structures. The direction and magnitude of photocurrent are defined by the sign and magnitude of the FE polarization. A model based on a photovoltaic effect with characteristics determined by polarization of PZT grains is proposed. The model considers the field interaction of FE polarization charge with the charge carriers in intergranular PbO channel. Thin-film FE capacitor is considered as a photosensitive heterogeneous medium, where the conduction of PbO channels along PZT grain boundaries is controlled by FE polarization.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T13-02
- Copyright
- Copyright © Materials Research Society 2007
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