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The Effect of Inorganic Thin Film Material Processing and Properties on Stress in Silicon Piezoresistive Pressure Sensors

Published online by Cambridge University Press:  15 February 2011

G. Bitko ,
A. C. McNeil  and
D. J. Monk
G. Bitko
Affiliation:
Motorola, Semiconductor Products Sector, Sensor Products Division, M/D D138, 5005 E. McDowell Rd., Phoenix, AZ 85008
A. C. McNeil
Affiliation:
Motorola, Semiconductor Products Sector, Sensor Products Division, M/D D138, 5005 E. McDowell Rd., Phoenix, AZ 85008
D. J. Monk
Affiliation:
Motorola, Semiconductor Products Sector, Sensor Products Division, M/D D138, 5005 E. McDowell Rd., Phoenix, AZ 85008
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Abstract

Silicon bulk micromachined piezoresistive pressure sensors are sensitive to stresses caused by the application of inorganic thin films typically used for passivation purposes, and the change in stress that is caused by temperature changes in the operating environment of the sensor. Stress behavior over temperature is characterized for both thermal oxides grown on silicon at thicknesses from 0.18 μm to 0.36 μm, and PECVD silicon nitride films at thicknesses from 0.40 μm to 0.80 μn. Electrical parametric behavior is characterized for typical piezoresistive pressure sensors with these thin films deposited and patterned in several proposed passivation schemes. A finite element analysis is performed to predict how device parameters vary as a function of thin film patterning and properties. Correlations are drawn between model predictions, independent thin film behavior, and device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 221
Copyright
Copyright © Materials Research Society 1997

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References

[1] Bitko, G., Harries, R., Matkin, J., McNeil, A. C., Monk, D. J., Shah, M., and Wertz, J., “Thin Film Polymer Stress Measurements Using Piezoresistive Anisotropically Etched Pressure Sensors,” Proc. Mat. Res. Soc. Symp., San Francisco, CA, to be published, 1996.Google Scholar
[2] Townsend, P. H., Weihs, T. P., Sanchez, J., Børgesen, J. E., and P., “Thin Films: Stresses and Mechanical Properties IV,” in Materials Research Society Symposium Proceedings, vol. 308. Pittsburgh, PA: MRS, 1993.Google Scholar
[3] Brantley, W. A., “Calculated Elastic Constants for Stress Problems Associated with Semiconductor Devices,” J. Appl. Phys., vol. 44, pp. 534–535, 1973.Google Scholar
[4] Young, W. C., Roark's Formulas for Stress and Strain, 6th ed. New York: McGraw-Hill, 1989.Google Scholar
[5] Timoshenko, S. and Woinowsky-Krieger, S., Theory of Plates and Shells, 2nd ed. New York: McGraw-Hill Book Company, 1959.Google Scholar
[6] Bittle, D. A., Suhling, J. C., Beaty, R. E., Jaeger, R. C., and Johnson, R. W., “Piezoresistive Stress Sensors for Structural Analysis of Electronic Packages,” J. Electronic Packaging, vol. 113, pp. 203–214, 1991.Google Scholar
[7] Wu, T. H. T. and Roster, R. S., “Stress in PSG and Nitride Films as Related to Film Properties and Annealing,” Solid State Tech., vol. 35, pp. 65–72, 1992.Google Scholar
[8] Pearce, C. W., Fetcho, R. F., Gross, M. D., Koefer, R. F., and Pudliner, R. A., “Characteristics of Silicon Nitride Deposited by Plasma-Enhanced Chemical Vapor Deposition Using a Dual Frequency Radio-Frequency Source,” J. Appl. Phys., vol. 71, pp. 1838–1841, 1992.Google Scholar
[9] Tokunaga, K. and Sugawara, K., “The Influence of Plasma Silicon Nitride Passivation Film Quality on Aluminum Void Formation,” J. Electrochem. Soc., vol. 138, pp. 176–180, 1991.Google Scholar
[10] Budhani, R. C., Bunshah, R. F., and Flinn, P. A., “Kinetics of Structural Relaxation and Hydrogen Evolution from Plasma Deposited Silicon Nitride,” Appl. Phys. Lett., vol. 52, pp. 284–286, 1988.Google Scholar
[11] Claassen, W. A. P., Valkenburg, W. G. J. N., Willemsen, M. F. C., and Wijgert, W. M. V. D., “Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride Layers,” J. Electrochem. Soc., vol. 132, pp. 893–898, 1985.Google Scholar
[12] Sinha, A. K., Levinstein, H. J., and Smith, T. E., “Thermal Stresses and Cracking Resistance of Dielectric Films (SiN, Si3N4, and SiO2) on Si Substrates,” J. Appl. Phys., vol. 49, pp. 2423–2426, 1978.Google Scholar
[13] Chiang, C., Neubauer, G., Mack, A. S., Yoshioka, K., Cuan, G., Flinn, P. A., and Fraser, D. B., “Hardness and Modulus Studies on Dielectric Thin Films,” Proc. Mat. Res. Soc. Symp., San Francisco, CA, pp. 219–230, 1992.Google Scholar
[14] Nix, W. D., “Mechanical Properties of Thin Films,” Metallurgical Transactions A, vol.20A, pp. 2217–2245, 1989.Google Scholar