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The Effect of Initial Growth Conditions on the Tilting of Lattice Planes in InP-ON-GaAs Heterostructures

Published online by Cambridge University Press:  25 February 2011

Ferenc Riesz ,
K. Lischka ,
K. Rakennus ,
T. Hakkarainen ,
A. Pesek  and
E. Koppensteiner
Ferenc Riesz
Affiliation:
Forschungsinstitut für Optoelektronik, Universität Linz, A-4040 Linz, Austria
K. Lischka
Affiliation:
Forschungsinstitut für Optoelektronik, Universität Linz, A-4040 Linz, Austria
K. Rakennus
Affiliation:
Department of Physics, Tampere University of Technology, P.O. Box 527, SF-33101 Tampere, Finland
T. Hakkarainen
Affiliation:
Department of Physics, Tampere University of Technology, P.O. Box 527, SF-33101 Tampere, Finland
A. Pesek
Affiliation:
Institut für Experimentalphysik, Universität Linz, A-4040 Linz, Austria
E. Koppensteiner
Affiliation:
Jnstitut für Halbleiterphysik, Universität Linz, A-4040 Linz, Austria
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Abstract

The relative misorientation (tilt) between the epilayer and substrate (400) lattice planes of InP epilayers grown by gas-source molecular beam epitaxy on (100) GaAs substrates misoriented towards the (110) plane was studied by high resolution x-ray diffraction. For the growth temperature of 490–500°C, the direction of the relative tilt was nearly coincident with the direction of the substrate lattice plane tilting. In contrary, when a buffer layer was deposited at a lower temperature of 400–450°C prior to growth, an azimuthal rotation of about 45° was found between the directions of the relative tilt and the substrate lattice plane tilting. In order to explain the results, a temperature-dependent anisotropic nucleation model is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 23
Copyright
Copyright © Materials Research Society 1992

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References

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