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The Effect of Indium Depletion on the Composition of OMVPE Grown GaInAs

Published online by Cambridge University Press:  28 February 2011

Paul D. Agnello ,
Percy B. Chinoy  and
Sorab K. Ghandhi
Paul D. Agnello
Affiliation:
Presently at the IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
Percy B. Chinoy
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
Sorab K. Ghandhi
Affiliation:
Chemical Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

This paper describes an experimental and theoretical study of indium depletion during the OMVPE growth of GaInAs. A mathematical model for mass, momentum and energy transfer, together with decomposition of the indium species was developed. The model was compared with experimental results over a range of growth parameters that included susceptor temperature, slope, reactor pressure and reactant partial pressures. Excellent agreement was obtained for a model based on the homogeneous decomposition of a triethylindium-arsine adduct to a stable product via an irreversible bimolecular reaction, with an activation energy of 11.9 kcal/gmol. The model may be used for optimization of compositional uniformity and growth over a wide range of reactor conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 417
Copyright
Copyright © Materials Research Society 1990

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References

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