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The Effect of Incident Kinetic Energy on Stress in Sputter-Deposited Refractory-Metal Thin Films

Published online by Cambridge University Press:  15 February 2011

T.J. Vink ,
J.B.A.D. van Zon ,
J.C.S. Kools  and
W. Walrave
T.J. Vink
Affiliation:
Philips Research Laboratories Eindhoven, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

In magnetron sputter deposition the intrinsic stress in refractory-metal films changes from compressive to tensile on increasing the working-gas pressure. This pressure dependence is linked to the particle transport process from target to substrate during deposition. In this work we apply a Monte Carlo (MC) technique to simulate the transport of sputtered atoms and reflected neutrals in a background gas. Specific examples of Cr, Mo and W thin film growth in Ar and Ne gas ambients are presented. Trends in thermalization of the depositing atoms coincided with the observed trends in the compressive-to-tensile stress curves, for the different target and working-gas combinations studied. Furthermore, a quantitative correlation between the stress transition pressures and the incident kinetic energy of both sputtered atoms and reflected neutrals during film growth was found. In this case the contribution of the latter species was weighted with a relatively low factor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 591
Copyright
Copyright © Materials Research Society 1994

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References

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