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Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals

Published online by Cambridge University Press:  01 February 2011

A. Sarua ,
S. Rajasingam ,
M. Kuball ,
N. Garro ,
O. Sancho ,
A. Cros ,
A. Cantarero ,
D. Olguin ,
B. Liu  and
D. Zhuang
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A. Sarua
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
S. Rajasingam
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
M. Kuball
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
N. Garro
Affiliation:
Institut de Ciencia dels Materials, Universitat de Valencia, 46980 Paterna, Valencia, Spain
O. Sancho
Affiliation:
Institut de Ciencia dels Materials, Universitat de Valencia, 46980 Paterna, Valencia, Spain
A. Cros
Affiliation:
Institut de Ciencia dels Materials, Universitat de Valencia, 46980 Paterna, Valencia, Spain
A. Cantarero
Affiliation:
Institut de Ciencia dels Materials, Universitat de Valencia, 46980 Paterna, Valencia, Spain
D. Olguin
Affiliation:
Depto. de Fisica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, AP. 14 740, Mexico D.F., 07300 Mexico
B. Liu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506
D. Zhuang
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506
J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506
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Abstract

Raman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560–660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed and tentatively attributed to oxygen and silicon local vibrational modes (LVMs) in AlN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.17
Copyright
Copyright © Materials Research Society 2004

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References

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