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Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

Published online by Cambridge University Press:  17 March 2011

Galina M. Khlyap ,
Petro G. Sydorchuk  and
Jacek Polit
Galina M. Khlyap
Affiliation:
State Pedagogical University, 24 Franko str., Drohobych, 82100, Ukraine
Petro G. Sydorchuk
Affiliation:
State Pedagogical University, 24 Franko str., Drohobych, 82100, Ukraine
Jacek Polit
Affiliation:
Institute of Physics, University of Rzeszow, 35-310 Rzeszow, Rejtana 16A, Poland
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Abstract

The effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H4.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Khlyap, G., Sydorchuk, P., Polit, J. et al. Mat. Res. Soc. Proc. Vol.785, D10.10.1 (2004).Google Scholar
2. Martin, I., Vetter, M., Apella, E. et al. , Appl. Phys. Lett. 84, 1474 (2004).Google Scholar
3. Ristova, M., Kuo, Y., and Lee, H.H., Appl. Surf. Sci. 218, 44 (2003).Google Scholar
4. Vasilev, I., Phys. Stat. Sol. (b) 239, 19 (2003).Google Scholar
5. Sze, S., Physics of Semiconductor Devices, Wiley, New York (1981).Google Scholar
6. Hernandez, E., Cryst. Res. Tech. 33, 285 (1998).Google Scholar