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The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys

Published online by Cambridge University Press:  21 February 2011

C.M. Fortmann ,
D.E. Albright ,
I.H. Campbell  and
P.M. Fauchet
C.M. Fortmann
Affiliation:
University of Delaware, Institute of Energy Conversion Newark, Delaware 19716
D.E. Albright
Affiliation:
University of Delaware, Institute of Energy Conversion Newark, Delaware 19716
I.H. Campbell
Affiliation:
Princeton University Department of Electrical Engineering Princeton, NJ 08544
P.M. Fauchet
Affiliation:
Princeton University Department of Electrical Engineering Princeton, NJ 08544
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Abstract

The transport properties of intrinsic micro-crystalline and amorphous SiGe films are investigated. In the amorphous system it is found that the electron lifetime is relatively independent of band gag while the electron mobility of a-Ge:H is a factor of ten less than that of a-Si:H. Micro-crystalline silicon films have greater excess photo-conductivity as compared to a-Si:H predominantly due to longer effective lifetimes. Films containing micro-crystalline silicon in a matrix of a-SiGe:H have been prepared and are found to have comparatively poor transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 315
Copyright
Copyright © Materials Research Society 1990

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References

1. Saxena, N., Fortmann, C.M. Russell, T.W.F., Materials Research Society Proceedings Vol. 149, p.99, MRS, Pittsburgh, PA (1989)Google Scholar
2. Albright, D.E., Fortmann, C.M., Russell, T.W.F., Materials Research Society Proceedings Vol. 149, p. 521, MRS, Pittsburgh, PA (1989)Google Scholar
3. Saxena, N., Albright, D.E., Fortmann, C.M., Russell, T.W.F., Proc. of the 13th ICALS to be published in the J. Non. Cryst. SolidsGoogle Scholar
4. Mackenzie, K.D., Eggert, J.R., Leopold, D.J., Li, Y.M., Lin, S., and Paul, W. Phys. Rev. B31, p. 2198 (1985)Google Scholar
5. Brodsky, M.H., Topics in Applied Physics Vol. 36, Amorphous Semiconductors, p124 Springer-Verlag NY (1985)Google Scholar
6. Fortmann, C.M., Materials Research Society Proceedings Vol. 118, p.691, MRS, Pittsburgh, PA (1988)Google Scholar
7. Paul, W., Amorphous Silicon and Related Materials pp. 63–79 edited by Fritzsche, H., World Scientific, NJ (1988)Google Scholar
8. Fortmann, C.M. and Tu, J. Conference record of the 20th IEEE PVSC, p. 139, IEEE, NY (1989)Google Scholar
9. Fortmann, C.M., Hegedus, S.S., and Buchanan, W.A., Proc. of the 1st ICAST to be published in the J. Non. Cryst. SolidsGoogle Scholar
10. Aljishi, S., Smith, Z. E., Chu, V. Kolodzey, J., Slobodin, D., Conde, J.P. Shen, D.S., Wagner, S., AIP Conf. Proc. 157, p. 25, AIP, NY (1987)Google Scholar