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The Effect of Hydrogen on the Kinetics of Solid Phase Epitaxy in Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

J. A. Roth ,
G. L. Olson ,
D. C. Jacobson ,
J. M. Poate  and
C. Kirschbaum
J. A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. Kirschbaum
Affiliation:
Charles Evans and Associates, Redwood City, CA 94063
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Abstract

This paper discusses the intrusion of H into a-Si layers during solid phase epitaxy and the effect of this H on the growth kinetics. We show that during annealing in the presence of water vapor, H is continuously generated at the oxidizing a-Si surface and diffuses into the amorphous layer, where it causes a reduction in the epitaxial growth rate. The measured variation of growth rate with the depth of the amorphous/crystal interface is correlated with the concentration of H at the interface. The diffusion coefficient for H in a-Si is determined by comparing measured depth profiles with calculated values. Hydrogen intrusion is observed even in layers annealed in vacuum and in inert gas ambients. Thin (<;5000 Åthick) a-Si layers are especially susceptible to this effect, but we show that in spite of the presence of H the activation energy for SPE derived earlier from thin-layer data is in good agreement with the intrinsic value obtained from thick, hydrogen-free layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 45
Copyright
Copyright © Materials Research Society 1992

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References

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