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The Effect of Hydrogen Dilution of the Gas Plasma on Glow Discharge a-Ge:H

Published online by Cambridge University Press:  25 February 2011

W. A. Turner ,
S. J. Jones ,
Choochon Lee ,
S. M. Lee ,
Yuan-min Li  and
W. Paul
W. A. Turner
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
S. J. Jones
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Choochon Lee
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
S. M. Lee
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Yuan-min Li
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
W. Paul
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

A series of films of amorphous hydrogenated germanium has been produced using the r.f. glow discharge technique by varying the H2/GeH4 ratio in the gas plasma from 0 to 50 while keeping all other deposition parameters constant. Electronic, optical, and structural characterization has been performed. No significant changes in optical and electronic properties were observed for this range of dilution, in contrast to repeated reports on the hydrogenated silicon-germanium alloy system. However, small systematic changes in structure are observed using TEM techniques. We conclude that the observed differences are unimportant in determining the optical and electronic properties of this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 69
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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