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The Effect of High Energy Electron Beam on the Interaction Between CH4/CF4 and the Diamond (100) Surface

Published online by Cambridge University Press:  25 February 2011

B. Y. Lin ,
C. P. Beetz ,
D. W. Brown  and
B. A. Lincoln
B. Y. Lin
Affiliation:
Advanced Technology Materials 7 Commerce Drive, Danbury, CT 06810
C. P. Beetz
Affiliation:
Advanced Technology Materials 7 Commerce Drive, Danbury, CT 06810
D. W. Brown
Affiliation:
Advanced Technology Materials 7 Commerce Drive, Danbury, CT 06810
B. A. Lincoln
Affiliation:
Advanced Technology Materials 7 Commerce Drive, Danbury, CT 06810
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Abstract

The interaction of the diamond (100) surface with pure CH4 and CF4 gases was investigated as a function of temperature and total gas exposure. We found that sp2 carbon does not form on the diamond (100) surface after exposures of up to lO9L of CH4 or 106 L of CF4 in a UHV system over the range of temperatures from room temperature to 900°C. When a high energy electron beam (5keV) intersected the path of the impinging gas or the diamond surface was exposed to a high energy electron beam before gas exposures, sp2 carbon was not produced at levels detectable by Auger spectroscopy. However, sp2 carbon was formed when the gas exposure was coincident with the electron beam on the diamond surface. The mechanisms responsible for these observations are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 421
Copyright
Copyright © Materials Research Society 1993

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References

1 Thomas, R. E., Rudder, R. A. and Markunas, R. J., Mat. Res. Soc. Symp. Proc. 204, 327 (1991).Google Scholar
2 Patterson, D. E., Bai, B. J., Chu, C. J., Hauge, R. H., and Margrave, J. L., Second Int. Conf. New Diamond Sci. and Tech., Washington, D. C., Sept. 23–27 (1990).Google Scholar
3 Rudder, R. A., Posthill, J. B., and Markunas, R. J., Elect. Lett., 25, 1220 (1989).Google Scholar
4 Yoder, M., private communication.Google Scholar
5 Lurie, P. G. and Wilson, J. M., Surf. Sci., 65, 476 (1977).Google Scholar
6 Lin, B. Y., Beetz, C. P., Brown, D. W., and Lincoln, B. A., Res. Soc. Symp. Nov. 30 - Dec. 4 Boston MA, paper B15.7 (1992).Google Scholar