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Effect of Growth Conditions on Structural and Electrical Properties of Pb(ZrxTi1−x)O3 layers grown by peroxide MBE

Published online by Cambridge University Press:  01 February 2011

Natalia Izyumskaya ,
V. Avrutin ,
X. Gu ,
B. Xiao ,
S. Chevtchenko ,
Lin Zhou ,
David J. Smith ,
J.-G. Yoon  and
H. Morkoc
Natalia Izyumskaya
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical and Computer Engineering, 601 W. Main St., Richmond, VA, 23284, United States, (804) 440 6726, (804) 828 4269
V. Avrutin
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
X. Gu
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
B. Xiao
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
S. Chevtchenko
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
Lin Zhou
Affiliation:
[email protected], Arizona State University, Deptartment of Physics, Tempe, AZ, 85287, United States
David J. Smith
Affiliation:
[email protected], Arizona State University, Deptartment of Physics, Tempe, AZ, 85287, United States
J.-G. Yoon
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
H. Morkoc
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
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Abstract

Pb(ZrxTi1−x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied by x-ray diffractometry, scanning and transmission electron microscopy, conductive atomic force microscopy, and electrical (I-V and polarization-field) measurements. The hydrogen peroxide pressure was found to control the phase composition of the films. Excess peroxide leads to PbO inclusions in PZT layers, whereas deficiency results in the TiO2 or the ZrO2 phase. The second-phase inclusions can be responsible for high leakage current in the films. Precise control over the peroxide pressure is imperative for single-phase PZT films with good ferroelectric properties.

Keywords

ferroelectricthin filmmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-27
Copyright
Copyright © Materials Research Society 2008

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