Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-07-07T11:29:45.950Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

Published online by Cambridge University Press:  04 April 2011

H.Y. Liu ,
V. Avrutin ,
N. Izyumskaya ,
M.A. Reshchikov ,
S. Wolgast ,
C. Kurdak ,
A.B. Yankovich ,
A. Kvit ,
P. Voyles  and
Ü. Özgür
...Show all authors
H.Y. Liu
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
V. Avrutin*
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
N. Izyumskaya
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
M.A. Reshchikov
Affiliation:
Physics Department, Virginia Commonwealth University, Richmond, VA 23284
S. Wolgast
Affiliation:
Physics Department, University of Michigan, Ann Arbor, MI 48109
C. Kurdak
Affiliation:
Physics Department, University of Michigan, Ann Arbor, MI 48109
A.B. Yankovich
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
A. Kvit
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
P. Voyles
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
Ü. Özgür
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
H. Morkoç
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284 Physics Department, Virginia Commonwealth University, Richmond, VA 23284
*
*[email protected]
Get access

Abstract:

We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:Ga surface morphologies varying from rough surfaces with well defined three-dimensional islands, capable to enhance light extraction in light-emitting diodes, to rather smooth surfaces with a surface roughness of ~ 2 nm suitable for vertical-cavity lasers can be achieved by controlling the surface morphologies of p-GaN. Optical transmittance measurements revealed high transparency exceeding 90% in the visible spectral range for ZnO:Ga with both types of surface morphology.

Keywords

thin filmelectrical propertiesmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1315: Symposium MM – Transparent Conducting Oxides and Applications , 2011 , mrsf10-1315-mm09-03
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Liu, H.Y., Avrutin, V., Izyumskaya, N., Reshchikov, M.A., Özgür, Ü., and Morkoç, H., Phys. Status Solidi RRL 4, 70 (2010).Google Scholar
2. Sheu, J.-K., Lu, Y. S., Lee, M.-L., Lai, W. C., Kuo, C. H., and Tun, C.-J., Appl. Phys. Lett. 90, 263511 (2007).Google Scholar
3. Liu, H.Y., Avrutin, V., Izyumskaya, N., Özgür, Ü., Morkoç, H., Superlattices & Microstructures 48, 458 (2010).Google Scholar
4. Liu, H.Y., Li, X., Ni, X., Avrutin, V., Izyumskaya, N., Özgür, Ü., and Morkoç, H., Proc. SPIE, 7602, 76021 (2010).Google Scholar
5. Li, X., Liu, H.Y., Liu, S., Ni, X., Wu, M., Avrutin, V., Izyumskaya, N., Özgür, Ü., and Morkoç, H., Phys. Stat. Sol. (a), 207, 1993 (2010).Google Scholar
6. Liu, H.Y., Avrutin, V., Izyumskaya, N., Reshchikov, M.A., Özgür, Ü., and Morkoç, H., MRS (2009) DOI: 10.1557/PROC-1201-H05-20.Google Scholar