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Effect of Geometrical Irregularities on the Band Gap of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

B. Sapoval  and
S. Russ
B. Sapoval
Affiliation:
Laboratoire de Physique de la Matière Condensée, C.N.R.S. Ecole Polytechnique, 91128 Palaiseau Cédex. France
S. Russ
Affiliation:
Laboratoire de Physique de la Matière Condensée, C.N.R.S. Ecole Polytechnique, 91128 Palaiseau Cédex. France
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Abstract

We discuss how the geometrical irregularities of small crystallites, quantum dots or wires may play an essential role in the density of electronic states near the band gap in semiconductors. Assuming a possible irregular structure for porous silicon we show that the irregularity has a strong effect on the value of the band gap and of the density of states in the near band gap region. The effect of the irregularity is essentially to enhance the quantum confinement effect and to screen the fundamental wave-function from the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 37
Copyright
Copyright © Materials Research Society 1995

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References

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