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Effect of Ge in Cl2 Plasma for Reactive Ion Etching of GaN

Published online by Cambridge University Press:  21 March 2011

Tatsuhiro Urushido ,
Harumasa Yoshida ,
Hideto Miyake  and
Kazumasa Hiramatsu
Tatsuhiro Urushido
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Harumasa Yoshida
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
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Abstract

We investigated the effect of Ge and Si in Cl2 plasma on reactive ion etching (RIE) of GaN. The etched surfaces of GaN were smooth, and high etch rates of 0.63 m/min and 0.41 m m/min were obtained using a Ge plate and a Si plate, respectively. A rough surface was formed for the quartz plate without the Ge plate or Si plate. Optical emission spectroscopy revealed optical emissions related to GeClx+ions in Cl2 plasma with the Ge plate, to SiClx+ ions with the Si plate and to Cl+ ions without the Ge or the Si plate. It is considered that the GeClx+ions and SiClx+ ions for RIE of GaN plays an important role in obtaining a smooth etched surface of GaN, and that the high-energy Cl+ ion severely damages the GaN surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.29.1
Copyright
Copyright © Materials Research Society 2002

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